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| (R) BD135 BD139 NPN SILICON TRANSISTORS Type BD135 BD135-10 BD135-16 BD139 BD139-10 BD139-16 s Marking BD135 BD135-10 BD135-16 BD139 BD139-10 BD139-16 3 2 1 STMicroelectronics PREFERRED SALESTYPES SOT-32 DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN transistors mounted in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The complementary PNP types are BD136 and BD140 respectively. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot P tot T stg Tj Parameter BD135 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 o C Total Dissipation at T amb 25 o C Storage Temperature Max. Operating Junction Temperature 45 45 5 1.5 3 0.5 12.5 1.25 -65 to 150 150 Value BD139 80 80 V V V A A A W W o o Unit C C September 2001 1/4 BD135 / BD139 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 10 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = 30 V V CB = 30 V V EB = 5 V I C = 30 mA for BD135 for BD139 I C = 0.5 A I C = 0.5 A I C = 5 mA I C = 150 mA I C = 0.5 A I B = 0.05 A V CE = 2 V V CE = 2 V V CE = 2 V V CE = 2 V 25 40 25 63 100 T C = 125 o C Min. Typ. Max. 0.1 10 10 Unit A A A V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE h FE Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain 45 80 0.5 1 250 V V V V h FE h FE Groups I C = 150 mA VCE = 2 V for BD135/BD139 group-10 for BD135/BD139 group-16 160 250 * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Area 2/4 BD135 / BD139 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 I O V 2.15 1.27 0.3 10 o DIM. 7.4 10.5 0.7 0.40 2.4 1.0 15.4 inch MAX. 7.8 10.8 0.9 0.65 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.015 0.094 0.039 0.606 0.087 0.173 0.150 3.2 2.54 0.084 0.05 0.011 10o 0.118 0.126 0.100 TYP. MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 TYP. 2.2 4.4 3.8 3 1: Base 2: Collector 3: Emitter 0016114/B 3/4 BD135 / BD139 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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